 |  | | |
| PartNumber | SSM6J215FE(TE85L,F | SSM6J215FE | SSM6J215FE(TE85L |
| Description | MOSFET P-Ch U-MOS VI FET ID -3.4A -20V 630pF | ||
| Manufacturer | Toshiba | TOSHIBA | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | ES6-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 3.4 A | - | - |
| Rds On Drain Source Resistance | 154 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 10.4 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 500 mW (1/2 W) | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Height | 0.55 mm | - | - |
| Length | 1.6 mm | - | - |
| Series | SSM6J213 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 1.2 mm | - | - |
| Brand | Toshiba | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.001270 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
SSM6J215FE(TE85L,F | MOSFET P-Ch U-MOS VI FET ID -3.4A -20V 630pF | |
| SSM6J215FE(TE85L,F | Darlington Transistors MOSFET P-Ch U-MOS VI FET ID -3.4A -20V 630pF | ||
| SSM6J215FE | New and Original | ||
| SSM6J215FE(TE85L | New and Original |