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TSM2N60S

TSM2N60SCW RPG vs TSM2N60SCW vs TSM2N60SCWRP

 
PartNumberTSM2N60SCW RPGTSM2N60SCWTSM2N60SCWRP
DescriptionMOSFET 600V 2Amp 4ohm N channel MosfetMOSFET 600V 2Amp N channel MOSFET
ManufacturerTaiwan SemiconductorTaiwan Semiconductor-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current600 mA--
Rds On Drain Source Resistance3.6 Ohms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge13 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingReelReel-
Transistor Type1 N-Channel1 N-Channel-
BrandTaiwan Semiconductor--
Fall Time24 ns--
Product TypeMOSFET--
Rise Time21 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30 ns--
Typical Turn On Delay Time12 ns--
Unit Weight0.009171 oz0.008826 oz-
Package Case-SOT-223-3-
Vgs Gate Source Voltage-+/- 30 V-
Id Continuous Drain Current-600 mA-
Vds Drain Source Breakdown Voltage-600 V-
Vgs th Gate Source Threshold Voltage-4 V-
Rds On Drain Source Resistance-5 Ohms-
Qg Gate Charge-9.5 nC-
Manufacturer Part # Description RFQ
Taiwan Semiconductor
Taiwan Semiconductor 		TSM2N60SCW RPG MOSFET 600V 2Amp 4ohm N channel Mosfet
TSM2N60SCW RPG Trans MOSFET N-CH 600V 0.6A T/R
TSM2N60SCW MOSFET 600V 2Amp N channel MOSFET
TSM2N60SCWRP New and Original
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