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| PartNumber | ZXTN2010ZQTA | ZXTN2010ZTA | ZXTN2010Z |
| Description | Bipolar Transistors - BJT Pwr Low Sat Transistor | Bipolar Transistors - BJT 60V NPN Med Power | TRANS GP BJT NPN 60V 5A 4PIN(3+TB)SOT89, PK |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 80 V | 60 V | - |
| Collector Base Voltage VCBO | 190 V | 150 V | - |
| Emitter Base Voltage VEBO | 8.1 V | 7 V | - |
| Collector Emitter Saturation Voltage | 230 mV | - | - |
| Maximum DC Collector Current | 20 A | 5 A | - |
| Gain Bandwidth Product fT | 130 MHz | 130 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | ZXTN2010 | ZXTN2010 | - |
| DC Current Gain hFE Max | 300 | - | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Continuous Collector Current | 5 A | 5 A | - |
| Pd Power Dissipation | 1.5 W | 2100 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | Transistors | Transistors | - |
| RoHS | - | Y | - |
| Package / Case | - | SOT-89-3 | - |
| Height | - | 1.6 mm | - |
| Length | - | 4.6 mm | - |
| Packaging | - | Reel | - |
| Width | - | 2.6 mm | - |
| Unit Weight | - | 0.001834 oz | - |