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CSD25303W1015

CSD25303W1015
Mfr. #:
CSD25303W1015
説明:
MOSFET PCh NexFET Pwr MOSFET
ライフサイクル:
メーカー新製品
データシート:
CSD25303W1015 データシート
配達:
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詳しくは:
CSD25303W1015 詳しくは CSD25303W1015 Product Details
製品属性
属性値
メーカー：
テキサスインスツルメンツ
製品カテゴリ：
MOSFET
JBoss：
Y
テクノロジー：
Si
取り付けスタイル：
SMD / SMT
パッケージ/ケース：
DSBGA-6
チャネル数：
1 Channel
トランジスタの極性：
Pチャネル
Vds-ドレイン-ソース間降伏電圧：
20 V
Id-連続ドレイン電流：
3 A
Rds On-ドレイン-ソース抵抗：
56 mOhms
Vgs-ゲート-ソース間電圧：
8 V
最低動作温度：
- 55 C
最高作動温度：
+ 150 C
Pd-消費電力：
1.5 W
構成：
独身
商標名：
NexFET
包装：
リール
高さ：
0.625 mm
長さ：
1.5 mm
シリーズ：
CSD25303W1015
トランジスタタイプ：
1 P-Channel
幅：
1 mm
ブランド：
テキサスインスツルメンツ
製品タイプ：
MOSFET
ファクトリーパックの数量：
3000
サブカテゴリ：
MOSFET
単位重量：
0.000060 oz
Tags
CSD2530, CSD253, CSD25, CSD2, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
P-Channel NexFET Power MOSFET 6-DSBGA -55 to 150
***ical
Trans MOSFET P-CH 20V 3A 6-Pin DSBGA T/R
***et
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***ark
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***ure Electronics
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***ical
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***ark
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***des Inc SCT
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***emi
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***et Europe
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***ure Electronics
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***r Electronics
Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC
***nell
MOSFET, DUAL P CH, -20V, -3.7A, MICROFET; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-3.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:1.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:µFET; No. of Pins:6; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
***emi
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***r Electronics
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***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Package/Case:6-WDFN; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes
***emi
Power MOSFET 20V 3.2A 100 mOhm Dual Complementary WDFN6 with ESD
***r Electronics
Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Package/Case:6-WDFN; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes
*** Source Electronics
Trans MOSFET P-CH 20V 3.1A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 3.1A SOT23-3
***enic
20V 3.1A 1.6W 112m´Î@4.5V2.8A 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
***roFlash
Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***nell
MOSFET, P CH, -20V, -3.1A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.1A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:-2.5V; Power Dissipation Pd:1.6W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-
***peria
PMDPB65UP - 20 V, 3.5 A dual P-channel Trench MOSFET
***et
Trans MOSFET Array Dual P-CH 20V 3.5A 6-Pin HUSON EP T/R
*** Americas
=""=""=""SOT1118/ STANDARD MARKING * REEL PACK, SMD, 7""""""""
***S
French Electronic Distributor since 1988
***ark
DUAL P CH MOSFET, TRENCH, 320V, -3.5A, SOT-1118; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.058ohm; Rds(on) Test Voltage Vgs:-4.5V ;RoHS Compliant: Yes
モデル 説明 ストック 価格
CSD25303W1015
DISTI # 296-28317-2-ND		MOSFET P-CH 20V 3A 6DSBGA
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    CSD25303W1015
    DISTI # 296-28317-1-ND    		MOSFET P-CH 20V 3A 6DSBGA
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      CSD25303W1015
      DISTI # 296-28317-6-ND      		MOSFET P-CH 20V 3A 6DSBGA
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        CSD25303W1015
        DISTI # CSD25303W1015        		Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET (Alt: CSD25303W1015)
        RoHS: Not Compliant
        Min Qty: 1000        		Americas - 0
        • 1000:$0.3619
        • 1002:$0.3449
        • 2002:$0.3329
        • 5000:$0.3219
        • 10000:$0.3129
        CSD25303W1015Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant        		4390
        • 1000:$0.3300
        • 500:$0.3500
        • 100:$0.3600
        • 25:$0.3800
        • 1:$0.4100
        CSD25303W1015
        DISTI # 595-CSD25303W1015        		MOSFET PCh NexFET Pwr MOSFET
        RoHS: Compliant        		0
          画像 モデル 説明
          CSD25310Q2T

          Mfr.#: CSD25310Q2T

          OMO.#: OMO-CSD25310Q2T

          		 MOSFET -20V, P ch NexFET MOSFETG , single SON 2x2, 23.9mOhm 6-WSON -55 to 150
          CSD25310Q2

          Mfr.#: CSD25310Q2

          OMO.#: OMO-CSD25310Q2

          		 MOSFET 20-V P-CH NexFET Pwr MOSFET
          CSD25304W1015T

          Mfr.#: CSD25304W1015T

          OMO.#: OMO-CSD25304W1015T

          		 MOSFET 20V P-Ch NexFET
          CSD25301W1015

          Mfr.#: CSD25301W1015

          OMO.#: OMO-CSD25301W1015

          		 MOSFET P-Ch NexFET Power MOSFETs
          CSD25302Q2

          Mfr.#: CSD25302Q2

          OMO.#: OMO-CSD25302Q2

          		 MOSFET PCh NexFET Pwr MOSFET
          CSD25303W1015

          Mfr.#: CSD25303W1015

          OMO.#: OMO-CSD25303W1015

          		 MOSFET PCh NexFET Pwr MOSFET
          CSD25302Q2

          Mfr.#: CSD25302Q2

          OMO.#: OMO-CSD25302Q2-TEXAS-INSTRUMENTS

          		 MOSFET P-CH 20V 5A 6SON
          CSD25304W1015T

          Mfr.#: CSD25304W1015T

          OMO.#: OMO-CSD25304W1015T-TEXAS-INSTRUMENTS

          		 MOSFET P-CH 20V 3A 6DSBGA
          CSD25310Q2T

          Mfr.#: CSD25310Q2T

          OMO.#: OMO-CSD25310Q2T-TEXAS-INSTRUMENTS

          		 20-V P-CHANNEL NEXFET POWER MOSF
          CSD25310Q2

          Mfr.#: CSD25310Q2

          OMO.#: OMO-CSD25310Q2-TEXAS-INSTRUMENTS

          		 Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R
          可用性
          ストック:
          Available
          注文中:
          4500
          数量を入力してください:
          CSD25303W1015の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
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