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FDB603AL

FDB603AL
Mfr. #:
FDB603AL
メーカー:
Rochester Electronics, LLC
説明:
- Bulk (Alt: FDB603AL)
ライフサイクル:
メーカー新製品
データシート:
FDB603AL データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
Tags
FDB603A, FDB603, FDB60, FDB6, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***S
French Electronic Distributor since 1988
***ser
Not available to order .
***emi
PowerTrench® MOSFET, N-Channel, 25V, 35A, 8.5mΩ
***ure Electronics
N-Channel 25 V 35 A 8.5 mOhm PowerTrench® MOSFET- TO-252AA
*** Stop Electro
Power Field-Effect Transistor, 35A I(D), 25V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***el Electronic
Rectangular Connectors - Headers, Receptacles, Female Sockets 2 Socket Solder Beryllium Copper Through Hole Bulk Gold Polycyclohexylenedimethylene Terephthalate (PCT), Polyester, Glass Filled 10 CONN SOCKET 10POS 0.1 GOLD PCB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
***nell
MOSFET, N CH, 25V, 35A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 50W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***emi
PowerTrench® MOSFET, N-Channel, 25V, 35A, 11mΩ
***ure Electronics
N-Channel 25 V 35 A 11 mOhm PowerTrench® Mosfet - TO-252-3
***r Electronics
Power Field-Effect Transistor, 35A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
***inecomponents.com
25V,35A,8.5 OHM, NCH, IPAK, POWER TRENCH MOSFET
***Yang
TRANS MOSFET N-CH 25V 35A 3PIN TO-251 - Bulk
***r Electronics
Power Field-Effect Transistor, 35A I(D), 25V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ure Electronics
Single N-Channel 60 V 0.018 Ohms Flange Mount Power Mosfet - TO-220FP
***p One Stop
Trans MOSFET N-CH 60V 37A 3-Pin(3+Tab) TO-220 Full-Pak
***nell
N CHANNEL MOSFET, 60V, 37A, TO-220; Transistor Polarity: N Channel; Drain Source Voltage Vds: 60V; Continuous Drain Current Id: 37A; On Resistance Rds(on): 0.018ohm; Transistor Mounting: Through Hole; Rds(on) Test Voltage Vgs: 10V; MSL: -
***ure Electronics
Single N-Channel 60 V 14.4 mOhm 32 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS
*** Source Electronics
Trans MOSFET N-CH 60V 11A 8-Pin PQFN EP T/R / MOSFET N-CH 60V 40A 8-PQFN
***(Formerly Allied Electronics)
MOSFET, 60V, 40A, 14.4 mOhm, 23 nC Qg, PQFN 5x6
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 46 W
***nell
MOSFET, N-CH, 60V, 40A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0114ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 46W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 2 - 1 year; SVHC: No SVHC (27-Jun-2018)
***ineon
Benefits: Low RDSon (less than 14.4 mOhms) Lowers Conduction Losses; Low Thermal Resistance to PCB (less than 2.7C/W) Enables better thermal dissipation; 100% Rg tested for Increased Reliability; Low Profile (less than 0.9 mm) results in Increased Power Density; Industry-Standard Pinout for Multi-Vendor Compatibility; Compatible with Existing Surface Mount Techniques for Easier Manufacturing; Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen; MSL1, Industrial Qualification results in Increased Reliability | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***o-Tech
N-channel MOSFET Transistor, 40 A, 30 V, 3-pin PG-TO-252-3-11
***ure Electronics
N-Channel 30 V 9 mOhm 15 nC OptiMOS™3 Power-Transistor - TO-252-3
***ark
MOSFET, N CHANNEL, 30V, 40A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 2.6 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 42
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
モデル メーカー 説明 ストック 価格
FDB603AL
DISTI # FDB603AL		ON Semiconductor- Bulk (Alt: FDB603AL)
Min Qty: 298
Container: Bulk		Americas - 0
  • 2980:$1.0369
  • 1490:$1.0629
  • 894:$1.0759
  • 596:$1.0899
  • 298:$1.0979
FDB603AL
DISTI # 512-FDB603AL		ON SemiconductorMOSFET
RoHS: Compliant		0
    FDB603AL_Q
    DISTI # 512-FDB603AL_Q    		ON SemiconductorMOSFET
    RoHS: Not compliant    		0
      FDB603ALFairchild Semiconductor CorporationPower Field-Effect Transistor, 33A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Not Compliant      		39200
      • 1000:$1.1100
      • 500:$1.1600
      • 100:$1.2100
      • 25:$1.2600
      • 1:$1.3600
      画像 モデル 説明
      FDB6030BL

      Mfr.#: FDB6030BL

      OMO.#: OMO-FDB6030BL

      		 MOSFET N-Channel PowerTrench
      FDB6030L

      Mfr.#: FDB6030L

      OMO.#: OMO-FDB6030L

      		 MOSFET N-Channel PowerTrench
      FDB6021

      Mfr.#: FDB6021

      OMO.#: OMO-FDB6021-1190

      		 ブランドニューオリジナル
      FDB6030BL-NL

      Mfr.#: FDB6030BL-NL

      OMO.#: OMO-FDB6030BL-NL-1190

      		 ブランドニューオリジナル
      FDB6030L-NL

      Mfr.#: FDB6030L-NL

      OMO.#: OMO-FDB6030L-NL-1190

      		 ブランドニューオリジナル
      FDB603AC

      Mfr.#: FDB603AC

      OMO.#: OMO-FDB603AC-1190

      		 ブランドニューオリジナル
      FDB6201P

      Mfr.#: FDB6201P

      OMO.#: OMO-FDB6201P-1190

      		 ブランドニューオリジナル
      FDB6670AL

      Mfr.#: FDB6670AL

      OMO.#: OMO-FDB6670AL-ON-SEMICONDUCTOR

      		 MOSFET N-CH 30V 80A D2PAK
      FDB6676S

      Mfr.#: FDB6676S

      OMO.#: OMO-FDB6676S-1190

      		 MOSFET 30V N-Ch PowerTrench Logic Level
      FDB6690S

      Mfr.#: FDB6690S

      OMO.#: OMO-FDB6690S-ON-SEMICONDUCTOR

      		 MOSFET N-CH 30V 42A TO-263AB
      可用性
      ストック:
      Available
      注文中:
      3500
      数量を入力してください:
      FDB603ALの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格（USD）
      量
      単価
      小計金額
      1
      $1.56
      $1.56
      10
      $1.48
      $14.78
      100
      $1.40
      $139.98
      500
      $1.32
      $661.00
      1000
      $1.24
      $1 244.30
      2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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