QS8J13TR

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TSMT-8

Number of Channels:

2 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

12 V

Id - Continuous Drain Current:

5.5 A

Rds On - Drain-Source Resistance:

15 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

8 V

Qg - Gate Charge:

60 nC

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.5 W

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Series:

QS8J13

Transistor Type:

2 P-Channel

Brand:

ROHM Semiconductor

Forward Transconductance - Min:

8.5 S

Fall Time:

200 ns

Product Type:

MOSFET

Rise Time:

100 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

400 ns

Typical Turn-On Delay Time:

13 ns

Part # Aliases:

QS8J13

Unit Weight:

0.196723 oz

Tags

QS8J1, QS8J, QS8