BSC750N10N

BSC750N10ND G vs BSC750N10NDGATMA1

 
PartNumberBSC750N10ND GBSC750N10NDGATMA1
DescriptionMOSFET N-Ch 100V 13A TDSON-8 OptiMOS 2MOSFET N-Ch 100V 13A TDSON-8 OptiMOS 2
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTDSON-8TDSON-8
Number of Channels2 Channel2 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V
Id Continuous Drain Current13 A13 A
Rds On Drain Source Resistance62 mOhms, 62 mOhms62 mOhms, 62 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge11 nC, 11 nC11 nC, 11 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation26 W26 W
ConfigurationDualDual
Channel ModeEnhancementEnhancement
TradenameOptiMOSOptiMOS
PackagingReelReel
Height1.27 mm1.27 mm
Length5.9 mm5.9 mm
ProductMOSFET Small Signal-
SeriesOptiMOS 2OptiMOS 2
Transistor Type2 N-Channel2 N-Channel
Width5.15 mm5.15 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min6.5 S, 6.5 S6.5 S, 6.5 S
Fall Time3 ns, 3 ns3 ns, 3 ns
Product TypeMOSFETMOSFET
Rise Time4 ns, 4 ns4 ns, 4 ns
Factory Pack Quantity50005000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time13 ns, 13 ns13 ns, 13 ns
Typical Turn On Delay Time9 ns, 9 ns9 ns, 9 ns
Part # AliasesBSC750N10NDGATMA1 BSC75N1NDGXT SP000359610BSC750N10ND BSC75N1NDGXT G SP000359610
Unit Weight0.003527 oz0.019612 oz
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC750N10ND G MOSFET N-Ch 100V 13A TDSON-8 OptiMOS 2
BSC750N10NDGATMA1 MOSFET N-Ch 100V 13A TDSON-8 OptiMOS 2
BSC750N10ND G Trans MOSFET N-CH 100V 3.2A 8-Pin TDSON T/R (Alt: BSC750N10ND G)
BSC750N10NDGATMA1 MOSFET 2N-CH 100V 3.2A 8TDSON
BSC750N10ND New and Original
BSC750N10NDG 100V,13A,Dual N-Ch Power MOSFET
BSC750N10NS3G New and Original
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