SIHB22N60AEL-GE3

Mfr. #:: SIHB22N60AEL-GE3
メーカー:: Vishay
説明:: MOSFET N-CHAN 600V
ライフサイクル:: メーカー新製品
データシート:: SIHB22N60AEL-GE3 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:
詳しくは:: SIHB22N60AEL-GE3 詳しくは

製品属性
属性値

Tags: SIHB22N60, SIHB22, SIHB2, SIHB, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHB22N60AEL-GE3 詳しくは

EL Series High Voltage MOSFETs: Vishay Semiconductors EL Series High Voltage MOSFETs are N-channel MOSFETs that reduces switching and conduction losses. These high voltage MOSFETs feature low Figure-Of-Merit (FOM), low input capacitance, and low gate charge. The EL high voltage MOSFETs operate in 650V drain-to-source voltage (VDS) and employs single configuration. These high voltage MOSFETs come with Unclamped Inductive Switching (UIS) avalanche energy rating. Typical applications include server and telecom power supplies, lighting, welding, induction heating, motor drives, and battery chargers.

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

モデル	メーカー	説明	ストック	価格
SIHB22N60AEL-GE3 DISTI # SIHB22N60AEL-GE3-ND	Vishay Siliconix	MOSFET N-CHAN 600V RoHS: Compliant Min Qty: 1 Container: Tube	100In Stock	3000:$2.0720 1000:$2.1756 100:$3.0303 25:$3.4964 10:$3.6990 1:$4.1200
SIHB22N60AEL-GE3 DISTI # SIHB22N60AEL-GE3	Vishay Intertechnologies	600 V EL SERIES POWER MOSFET - Tape and Reel (Alt: SIHB22N60AEL-GE3) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$1.7900 6000:$1.8900 2000:$1.9900 4000:$1.9900 1000:$2.0900
SIHB22N60AEL-GE3 DISTI # 59AC7370	Vishay Intertechnologies	N-CHANNEL 600V	0	2500:$1.8800 1000:$2.0300 500:$2.2800 100:$2.5200 50:$2.8500 25:$3.0800 10:$3.3300 1:$3.7600
SIHB22N60AEL-GE3 DISTI # 78-SIHB22N60AEL-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	948	1:$4.1400 10:$3.4300 100:$2.8200 250:$2.7300 500:$2.4500 1000:$2.0700 2500:$1.9600
SIHB22N60AEL-GE3 DISTI # 2932919	Vishay Intertechnologies	MOSFET, N-CH, 600V, 21A, 150DEG C, 208W RoHS: Compliant	49	500:£2.2700 250:£2.5500 100:£2.8200 10:£3.4300 1:£4.2700

関連製品

画像	モデル	説明
	Mfr.#: SIHB22N60AEL-GE3 OMO.#: OMO-SIHB22N60AEL-GE3	MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
	Mfr.#: SIHB22N60AE-GE3 OMO.#: OMO-SIHB22N60AE-GE3	MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
	Mfr.#: SIHB22N60E-GE3 OMO.#: OMO-SIHB22N60E-GE3	MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
	Mfr.#: SIHB22N60ET1-GE3 OMO.#: OMO-SIHB22N60ET1-GE3	MOSFET 600V Vds E Series D2PAK TO-263
	Mfr.#: SIHB22N60E-E3 OMO.#: OMO-SIHB22N60E-E3-VISHAY	RF Bipolar Transistors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
	Mfr.#: SIHB22N60AEL-GE3 OMO.#: OMO-SIHB22N60AEL-GE3-VISHAY	MOSFET N-CHAN 600V
	Mfr.#: SIHB22N60AE-GE3 OMO.#: OMO-SIHB22N60AE-GE3-VISHAY	MOSFET N-CH 600V 20A D2PAK
	Mfr.#: SIHB22N60E OMO.#: OMO-SIHB22N60E-1190	Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
	Mfr.#: SIHB22N60E-GE3 OMO.#: OMO-SIHB22N60E-GE3-VISHAY	MOSFET N-CH 600V 21A D2PAK
	Mfr.#: SIHB22N60S-GE3 OMO.#: OMO-SIHB22N60S-GE3-VISHAY	MOSFET N-CH 650V TO263