SIHB22N60E-E3

SIHB22N60E-E3
Mfr. #:
SIHB22N60E-E3
メーカー:
Vishay
説明:
RF Bipolar Transistors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
ライフサイクル:
メーカー新製品
データシート:
SIHB22N60E-E3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
SIHB22N60E-E3 詳しくは
製品属性
属性値
Tags
SIHB22N60E, SIHB22N60, SIHB22, SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N-Channel 600 V 0.18 O 86 nC Surface Mount Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK
***et
Trans MOSFET N-CH 600V 21A 3-Pin D2PAK
***i-Key
MOSFET N-CH 600V 21A D2PAK
***ark
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
モデル メーカー 説明 ストック 価格
SIHB22N60E-E3
DISTI # V36:1790_09219017
Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK
RoHS: Compliant
0
  • 1000000:$2.0180
  • 500000:$2.0230
  • 100000:$2.6420
  • 10000:$3.9000
  • 1000:$4.1200
SIHB22N60E-E3
DISTI # SIHB22N60E-E3-ND
Vishay SiliconixMOSFET N-CH 600V 21A D2PAK
Min Qty: 1
Container: Tube
368In Stock
  • 5000:$1.9891
  • 3000:$2.0668
  • 1000:$2.1756
  • 100:$3.0303
  • 25:$3.4964
  • 10:$3.6990
  • 1:$4.1200
SIHB22N60E-E3
DISTI # SIHB22N60E-E3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin D2PAK - Tape and Reel (Alt: SIHB22N60E-E3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
    SIHB22N60E-E3
    DISTI # 781-SIHB22N60E-E3
    Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant
    2025
    • 1:$4.1400
    • 10:$3.4300
    • 100:$2.8200
    • 250:$2.7300
    • 500:$2.4500
    • 1000:$2.0700
    • 2000:$1.9600
    SIHB22N60E-GE3
    DISTI # 781-SIHB22N60E-GE3
    Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant
    2740
    • 1:$4.1400
    • 10:$3.4300
    • 100:$2.8200
    • 250:$2.7300
    • 500:$2.4500
    • 1000:$2.0700
    • 2000:$1.9600
    SIHB22N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant
    Americas - 62600
    • 50:$2.6850
    • 100:$2.4360
    • 250:$2.2160
    • 500:$2.1440
    • 1000:$1.9360
    画像 モデル 説明
    SIHB22N60EF-GE3

    Mfr.#: SIHB22N60EF-GE3

    OMO.#: OMO-SIHB22N60EF-GE3

    MOSFET Nch 600V Vds 30V Vgs TO-263; w/diode
    SIHB22N60AE-GE3

    Mfr.#: SIHB22N60AE-GE3

    OMO.#: OMO-SIHB22N60AE-GE3

    MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N60E-GE3

    Mfr.#: SIHB22N60E-GE3

    OMO.#: OMO-SIHB22N60E-GE3

    MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N60ET1-GE3

    Mfr.#: SIHB22N60ET1-GE3

    OMO.#: OMO-SIHB22N60ET1-GE3

    MOSFET 600V Vds E Series D2PAK TO-263
    SIHB22N60E-E3

    Mfr.#: SIHB22N60E-E3

    OMO.#: OMO-SIHB22N60E-E3-VISHAY

    RF Bipolar Transistors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
    SIHB22N60AEL-GE3

    Mfr.#: SIHB22N60AEL-GE3

    OMO.#: OMO-SIHB22N60AEL-GE3-VISHAY

    MOSFET N-CHAN 600V
    SIHB22N60ET1-GE3

    Mfr.#: SIHB22N60ET1-GE3

    OMO.#: OMO-SIHB22N60ET1-GE3-VISHAY

    MOSFET N-CH 600V 21A TO263
    SIHB22N60S-GE3

    Mfr.#: SIHB22N60S-GE3

    OMO.#: OMO-SIHB22N60S-GE3-VISHAY

    MOSFET N-CH 650V TO263
    SIHB22N60SE3

    Mfr.#: SIHB22N60SE3

    OMO.#: OMO-SIHB22N60SE3-1190

    Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    SIHB22N60EL-GE3

    Mfr.#: SIHB22N60EL-GE3

    OMO.#: OMO-SIHB22N60EL-GE3-VISHAY

    MOSFET N-CH 600V 21A TO263
    可用性
    ストック:
    Available
    注文中:
    5000
    数量を入力してください:
    SIHB22N60E-E3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $2.68
    $2.68
    10
    $2.55
    $25.51
    100
    $2.42
    $241.65
    500
    $2.28
    $1 141.15
    1000
    $2.15
    $2 148.00
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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