PartNumber | SIHB22N60AEL-GE3 | SIHB22N60AE-GE3 | SIHB22N60E-E3 |
Description | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 650 V | 650 V |
Id Continuous Drain Current | 21 A | 20 A | 21 A |
Rds On Drain Source Resistance | 180 mOhms | 156 mOhms | 180 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 4 V | 4 V |
Vgs Gate Source Voltage | 10 V | 30 V | 30 V |
Qg Gate Charge | 41 nC | 48 nC | 57 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 208 W | 179 W | 227 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Series | EL | E | E |
Transistor Type | 1 N-Channel | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 15 S | - | - |
Fall Time | 28 ns | 21 ns | 35 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 24 ns | 33 ns | 27 ns |
Factory Pack Quantity | 1 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 86 ns | 45 ns | 66 ns |
Typical Turn On Delay Time | 27 ns | 19 ns | 18 ns |
Packaging | - | Tube | Tube |
Unit Weight | - | 0.077603 oz | 0.050717 oz |