 | |  | |
| PartNumber | BSC014NE2LSIXT | BSC014NE2LSIATMA1 | BSC015NE2LS5IATMA1 |
| Description | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | MOSFET N-CH 25V 33A TDSON-8 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | TDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 25 V | 25 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 1.2 mOhms | 1.2 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 52 nC | 52 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 74 W | 74 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 70 S | 70 S | - |
| Fall Time | 3.6 ns | 3.6 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5 ns | 5 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 25 ns | 25 ns | - |
| Typical Turn On Delay Time | 5 ns | 5 ns | - |
| Part # Aliases | BSC014NE2LSIATMA1 SP000911336 | BSC014NE2LSI BSC14NE2LSIXT SP000911336 | - |
| Unit Weight | - | 0.004174 oz | - |
| Part Aliases | - | - | BSC015NE2LS5I SP001288138 |
| Package Case | - | - | TDSON-8 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC016N06NSTATMA1 | MOSFET DIFFERENTIATED MOSFETS | |
| BSC016N06NS | MOSFET N-Ch 60V 100A DSON-8 OptiMOS | ||
| BSC016N06NSATMA1 | MOSFET N-Ch 60V 100A DSON-8 OptiMOS | ||
| BSC014NE2LSIXT | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | ||
| BSC014NE2LSIATMA1 | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | ||
| BSC018N04LS G | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC016N03MS G | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | ||
| BSC016N04LS G | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC016N03LSGATMA1 | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | ||
| BSC017N04NS G | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC016N04LSGATMA1 | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC016N03LS G | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | ||
| BSC014NE2LSIATMA1 | MOSFET N-CH 25V 33A TDSON-8 | ||
| BSC015NE2LS5IATMA1 | MOSFET N-CH 25V 33A TDSON-8 | ||
| BSC016N03MSGATMA1 | MOSFET N-CH 30V 100A TDSON-8 | ||
| BSC016N04LSGATMA1 | MOSFET N-CH 40V 100A TDSON-8 | ||
| BSC016N06NSATMA1 | MOSFET N-CH 60V 30A TDSON-8 | ||
| BSC017N04NSGATMA1 | MOSFET N-CH 40V 100A TDSON-8 | ||
| BSC016N06NSTATMA1 | DIFFERENTIATED MOSFETS | ||
| BSC016N03LSGATMA1 | MOSFET N-CH 30V 100A TDSON8 | ||
Infineon Technologies |
BSC017N04NSGATMA1 | MOSFET MV POWER MOS | |
| BSC018N04LSGATMA1 | MOSFET MV POWER MOS | ||
| BSC016N03MSGATMA1 | MOSFET LV POWER MOS | ||
| BSC016N03LSGXT/BKN | INSTOCK | ||
| BSC016N03KSG | New and Original | ||
| BSC016N03LS | New and Original | ||
| BSC016N03LSG | Power Field-Effect Transistor, 32A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC016N03LSG , TDA18275A | New and Original | ||
| BSC016N03LSGATMA1 , TDA1 | New and Original | ||
| BSC016N03LSGXT | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | ||
| BSC016N03MS | Transistor: N-MOSFET, unipolar, 30V, 100A, 125W, PG-TDSON-8 | ||
| BSC016N03MS G | Trans MOSFET N-CH 30V 28A 8-Pin TDSON T/R (Alt: BSC016N03MS G) | ||
| BSC016N03MSG | Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC016N03MSGXT | New and Original | ||
| BSC016N04LS | 100 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| BSC016N04LS G | Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP | ||
| BSC016N04LSG | 100 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| BSC016N04LSGS | New and Original | ||
| BSC016N06NS | MOSFET N-Ch 60V 100A DSON-8 OptiMOS | ||
| BSC016N06NS , TDA3629T , | New and Original | ||
| BSC016N06NSXT | New and Original | ||
| BSC017N04NS | New and Original | ||
| BSC017N04NS G | Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP | ||
| BSC017N04NSG | New and Original | ||
| BSC018N04LS | New and Original | ||
| BSC018N04LSG | 30 A, 40 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| BSC018N04LSG-S | New and Original | ||
| BSC014NE2LSIXT | Darlington Transistors MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | ||
| BSC016N03LS G | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | ||
| BSC018N04LS G | RF Bipolar Transistors MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 |