 |  | | |
| PartNumber | BSC028N06NSTATMA1 | BSC030N03LS G | BSC029N025S G |
| Description | MOSFET DIFFERENTIATED MOSFETS | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | MOSFET N-Ch 25V 24A TDSON-8 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-TDSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 30 V | 25 V |
| Id Continuous Drain Current | 100 A | 100 A | 24 A |
| Rds On Drain Source Resistance | 2.8 mOhms | 3 mOhms | 2.9 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.1 V | 1 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
| Qg Gate Charge | 37 nC | 55 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 83 W | 69 W | 2.8 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 50 S | 49 S | - |
| Fall Time | 8 ns | 4.8 ns | 6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 38 ns | 5.2 ns | 8 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 19 ns | 29 ns | 33 ns |
| Typical Turn On Delay Time | 11 ns | 7.3 ns | 7.5 ns |
| Part # Aliases | BSC028N06NST SP001666498 | BSC030N03LSGATMA1 BSC3N3LSGXT SP000237661 | BSC029N025SGXT |
| Tradename | - | OptiMOS | - |
| Height | - | 1.27 mm | 1.27 mm |
| Length | - | 5.9 mm | 5.9 mm |
| Series | - | OptiMOS 3 | - |
| Width | - | 5.15 mm | 5.15 mm |
| Moisture Sensitive | - | - | Yes |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC028N06NSTATMA1 | MOSFET DIFFERENTIATED MOSFETS | |
| BSC030P03NS3 G | MOSFET P-Ch -30V 25.4A TDSON-8 OptiMOS P3 | ||
| BSC030N08NS5ATMA1 | MOSFET N-Ch 80V 100A | ||
| BSC030N04NS G | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC030P03NS3GAUMA1 | MOSFET P-Ch -30V 25.4A TDSON-8 OptiMOS P3 | ||
| BSC030N03MS G | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | ||
| BSC030N03MSGATMA1 | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | ||
| BSC030N03LSGATMA1 | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | ||
| BSC030N03LS G | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | ||
| BSC031N06NS3 G | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | ||
| BSC030N04NSGXT | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC028N06NSTATMA1 | DIFFERENTIATED MOSFETS | ||
| BSC029N025S G | MOSFET N-CH 25V 100A TDSON-8 | ||
| BSC030N03LSGATMA1 | MOSFET N-CH 30V 100A TDSON-8 | ||
| BSC030N03MSGATMA1 | MOSFET N-CH 30V 100A TDSON-8 | ||
| BSC030N04NSGATMA1 | MOSFET N-CH 40V 100A TDSON-8 | ||
| BSC030P03NS3GAUMA1 | MOSFET P-CH 30V 100A TDSON-8 | ||
| BSC031N06NS3GATMA1 | MOSFET N-CH 60V 100A TDSON-8 | ||
| BSC032N03S | MOSFET N-CH 30V 50A TDSON-8 | ||
| BSC030N08NS5ATMA1 | MOSFET N-Ch 80V 100A | ||
Infineon Technologies |
BSC029N025S G | MOSFET N-Ch 25V 24A TDSON-8 | |
| BSC029N025SG | Power Field-Effect Transistor, 24A I(D), 25V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC029N025SGATMA1 | ブランドニューオリジナル | ||
| BSC030N03LS | ブランドニューオリジナル | ||
| BSC030N03LS G | Trans MOSFET N-CH 30V 23A 8-Pin TDSON T/R (Alt: BSC030N03LS G) | ||
| BSC030N03LSG | Power Field-Effect Transistor, 23A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC030N03LSGATMA1INFINEO | ブランドニューオリジナル | ||
| BSC030N03MS | ブランドニューオリジナル | ||
| BSC030N03MS G | Trans MOSFET N-CH 30V 21A 8-Pin TDSON EP | ||
| BSC030N03MSG | ブランドニューオリジナル | ||
| BSC030N03MSGATMA1 , TDA7 | ブランドニューオリジナル | ||
| BSC030N03MSGXT/BKN | ブランドニューオリジナル | ||
| BSC030N03SL | ブランドニューオリジナル | ||
| BSC030N04NS | ブランドニューオリジナル | ||
| BSC030N04NS G | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC030N04NSG | 40V,100A,N Channel Power MOSFET | ||
| BSC030N04NSGATMA1 , TDA7 | ブランドニューオリジナル | ||
| BSC030N08NS5 | Trans MOSFET N-CH 80V 100A 8-Pin TDSON EP | ||
| BSC030NO3LS | ブランドニューオリジナル | ||
| BSC030P03NS3 G | Trans MOSFET P-CH 30V 25.4A 8-Pin TDSON T/R (Alt: BSC030P03NS3 G) | ||
| BSC030P03NS3G | ブランドニューオリジナル | ||
| BSC030P03NS3GA | ブランドニューオリジナル | ||
| BSC030P03NS3GAUMA1 , TDA | ブランドニューオリジナル | ||
| BSC030PNS | ブランドニューオリジナル | ||
| BSC031N06NS3 | ブランドニューオリジナル | ||
| BSC031N06NS3 G | Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R | ||
| BSC031N06NS3G | Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC031N06NS3GATMA1 , TDA | ブランドニューオリジナル | ||
| BSC032N03MSG | ブランドニューオリジナル | ||
| BSC032N03S G | ブランドニューオリジナル |