PartNumber | SIHF28N60EF-GE3 | SIHF23N60E-GE3 | SIHF30N60E-E3 |
Description | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Packaging | Tube | Tube | Tube |
Series | EF | E | E |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
Mounting Style | - | Through Hole | Through Hole |
Package / Case | - | TO-220FP-3 | TO-220FP-3 |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 600 V | 600 V |
Id Continuous Drain Current | - | 23 A | 29 A |
Rds On Drain Source Resistance | - | 158 mOhms | 125 mOhms |
Vgs th Gate Source Threshold Voltage | - | 4 V | 2.8 V |
Vgs Gate Source Voltage | - | 30 V | 30 V |
Qg Gate Charge | - | 63 nC | 85 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 35 W | 37 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 15.49 mm | 15.49 mm |
Length | - | 10.41 mm | 10.41 mm |
Width | - | 4.7 mm | 4.7 mm |
Fall Time | - | 34 ns | 36 ns |
Rise Time | - | 38 ns | 32 ns |
Typical Turn Off Delay Time | - | 66 ns | 63 ns |
Typical Turn On Delay Time | - | 22 ns | 19 ns |
メーカー | モデル | 説明 | RFQ |
---|---|---|---|
Vishay / Siliconix |
SIHF35N60EF-GE3 | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | |
SIHF640S-GE3 | MOSFET 200V Vds 20V Vgs D2PAK (TO-263) | ||
SIHF540S-GE3 | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | ||
SIHF530STRL-GE3 | MOSFET 100V Vds 20V Vgs TO-220AB | ||
SIHF7N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | ||
SIHF30N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | ||
SIHF8N50D-E3 | MOSFET 500V Vds 30V Vgs TO-220 FULLPAK | ||
SIHF6N65E-GE3 | MOSFET 650V Vds 30V Vgs TO-220 FULLPAK | ||
SIHF28N60EF-GE3 | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | ||
SIHF530-GE3 | MOSFET 100V Vds 20V Vgs TO-220AB | ||
SIHF6N40D-E3 | MOSFET 400V Vds 30V Vgs TO-220 FULLPAK | ||
SIHF8N50L-E3 | MOSFET 500V Vds 30V Vgs TO-220 FULLPAK | ||
SIHF5N50D-E3 | MOSFET 500V Vds 30V Vgs TO-220 FULLPAK | ||
SIHF23N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | ||
SIHF520STRR-GE3 | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | ||
SIHF520STRL-GE3 | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | ||
SIHF30N60E-E3 | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | ||
SIHF840LCS-GE3 | MOSFET 500V Vds 30V Vgs D2PAK (TO-263) | ||
SIHF540STRL-GE3 | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | ||
SIHF7N60E-E3 | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | ||
SIHF30N60E-E3 | IGBT Transistors MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS | ||
SIHF530STRL-GE3 | - Tape and Reel (Alt: SIHF530STRL-GE3) | ||
SIHF540S-GE3 | Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK | ||
SIHF540STRL-GE3 | Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK T/R | ||
Vishay |
SIHF5N50D-E3 | Darlington Transistors MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS | |
SIHF6N40D-E3 | Darlington Transistors MOSFET 400V 1ohm@10V 6A N-Ch D-SRS | ||
SIHF6N65E-GE3 | IGBT Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS | ||
SIHF28N60EF-GE3 | RF Bipolar Transistors MOSFET 600V 123mOhms@10V 28A N-Ch MOSFET | ||
SIHF30N60E-GE3 | RF Bipolar Transistors MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS | ||
SIHF23N60E-GE3 | RF Bipolar Transistors MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS | ||
SIHF7N60E-GE3 | MOSFET N-CHANNEL 600V 7A TO220 | ||
SIHF8N50D-E3 | MOSFET N-CH 500V 8.7A TO220 FLPK | ||
SIHF7N60E-E3 | MOSFET N-CH 600V 7A TO-220 | ||
SIHF35N60E-GE3 | Power MOSFET | ||
SIHF35N60EF-GE3 | EF Series Power MOSFET with Fast Body Diode TO-220 FULLPAK, 97 m @ 10V | ||
SIHF520 | ブランドニューオリジナル | ||
SIHF530STRR-GE3 | SIHF530STRR-GE3 N-channel MOSFET Transistor, 14 A, 100 V, 3-Pin D2PAK | ||
SIHF540SGE3 | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
SIHF5N50C-E3 | ブランドニューオリジナル | ||
SIHF5N50D | ブランドニューオリジナル | ||
SIHF634NS | ブランドニューオリジナル | ||
SIHF640S | ブランドニューオリジナル | ||
SIHF644 | ブランドニューオリジナル | ||
SIHF740AS | ブランドニューオリジナル | ||
SIHF830 | ブランドニューオリジナル | ||
SIHF830L | ブランドニューオリジナル | ||
SIHF830S | ブランドニューオリジナル | ||
SIHF8N50L | ブランドニューオリジナル | ||
SIHF8N50L-E | ブランドニューオリジナル | ||
SIHF530 | ブランドニューオリジナル |