PartNumber | SIHB22N60AEL-GE3 | SIHB22N60E-E3 | SIHB22N60E-GE3 |
Description | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 650 V | 650 V |
Id Continuous Drain Current | 21 A | 21 A | 21 A |
Rds On Drain Source Resistance | 180 mOhms | 180 mOhms | 180 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 4 V | 4 V |
Vgs Gate Source Voltage | 10 V | 30 V | 30 V |
Qg Gate Charge | 41 nC | 57 nC | 57 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 208 W | 227 W | 227 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Series | EL | E | E |
Transistor Type | 1 N-Channel | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 15 S | - | - |
Fall Time | 28 ns | 35 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 24 ns | 27 ns | - |
Factory Pack Quantity | 1 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 86 ns | 66 ns | - |
Typical Turn On Delay Time | 27 ns | 18 ns | - |
Packaging | - | Tube | Tube |
Unit Weight | - | 0.050717 oz | 0.050717 oz |
メーカー | モデル | 説明 | RFQ |
---|---|---|---|
Vishay / Siliconix |
SIHB22N60EF-GE3 | MOSFET Nch 600V Vds 30V Vgs TO-263; w/diode | |
SIHB22N60AEL-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
SIHB24N65EF-GE3 | MOSFET 650V Vds 30V Vgs D2PAK (TO-263) | ||
SIHB24N65E-GE3 | MOSFET 650V Vds 30V Vgs D2PAK (TO-263) | ||
SIHB23N60E-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
SIHB22N60E-E3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
SIHB28N60EF-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
SIHB22N60E-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
SIHB30N60AEL-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
SIHB22N60EL-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
SIHB24N65ET5-GE3 | MOSFET N-Channel 650V | ||
SIHB22N65E-GE3 | MOSFET 650V Vds 30V Vgs D2PAK (TO-263) | ||
SIHB24N65E-E3 | MOSFET 650V Vds 30V Vgs D2PAK (TO-263) | ||
SIHB33N60E-E3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
SIHB22N60ET5-GE3 | MOSFET 600V Vds E Series D2PAK TO-263 | ||
SIHB24N65ET1-GE3 | MOSFET N-Channel 650V | ||
SIHB25N50E-GE3 | MOSFET 500V Vds 30V Vgs D2PAK (TO-263) | ||
SIHB22N60ET1-GE3 | MOSFET 600V Vds E Series D2PAK TO-263 | ||
SIHB30N60E-E3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
SIHB22N60S-E3 | IGBT Transistors MOSFET 600V N-Channel Superjunction D2PAK | ||
Vishay |
SIHB28N60EF-GE3 | IGBT Transistors MOSFET 600V 123mOhms@10V 28A N-Ch MOSFET | |
SIHB30N60E-E3 | RF Bipolar Transistors MOSFET N-Channel 600V | ||
SIHB22N65E-GE3 | RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS | ||
SIHB23N60E-GE3 | MOSFET N-CH 600V 23A D2PAK | ||
SIHB22N60E-E3 | RF Bipolar Transistors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS | ||
SIHB22N60AEL-GE3 | MOSFET N-CHAN 600V | ||
SIHB25N50E-GE3 | MOSFET N-CH 500V 26A TO263 | ||
SIHB30N60AEL-GE3 | MOSFET N-CHAN 600V D2PAK | ||
SIHB22N60AE-GE3 | MOSFET N-CH 600V 20A D2PAK | ||
SIHB22N60E-GE3 | MOSFET N-CH 600V 21A D2PAK | ||
SIHB22N60ET1-GE3 | MOSFET N-CH 600V 21A TO263 | ||
SIHB22N60ET5-GE3 | MOSFET N-CH 600V 21A TO263 | ||
SIHB22N60S-GE3 | MOSFET N-CH 650V TO263 | ||
SIHB24N65E-GE3 | MOSFET N-CH 650V 24A D2PAK | ||
SIHB24N65EF-GE3 | MOSFET N-CH 650V 24A D2PAK | ||
SIHB24N65ET1-GE3 | MOSFET N-CH 650V 24A TO263 | ||
SIHB30N60E-GE3 | MOSFET N-CH 600V 29A D2PAK | ||
SIHB22N60EL-GE3 | MOSFET N-CH 600V 21A TO263 | ||
SIHB24N65E-E3 | Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK | ||
SIHB24N65ET5-GE3 | MOSFET N-CH 650V 24A TO263 | ||
SIHB30N60E-GE3-CUT TAPE | ブランドニューオリジナル | ||
SIHB22N60E | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
SIHB22N60SE3 | Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
SIHB22N60SGE3 | Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
SIHB22N65E | Trans MOSFET N-CH 650V 22A 3-Pin D2PAK - Tape and Reel (Alt: SIHB22N65E) | ||
SIHB24N65E | ブランドニューオリジナル | ||
SIHB24N65EGE3 | ブランドニューオリジナル | ||
SIHB30N60E | ブランドニューオリジナル | ||
SIHB30N60EGE3 | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
SIHB33N60E | N-CH 600V 99mOhm 33A TO263 |