ON Semiconductor N-channel MOSFET is produced using ON Semiconductor's advanced Power Trench process that has been especially tailored to minimize on-state resistance, yet maintain superior switching performance.
Features
Max RDS(ON) = 2.4 mΩ at VGS = 10 V, ID = 25 A
Max RDS(ON) = 3.2 mΩ at VGS = 8 V, ID = 22 A
Advanced package and silicon combination for low RDS(ON) and high-efficiency