Toshiba has expanded its family of ultra-high-efficiency, low-voltage MOSFETs by adding 45 V and 60 V devices to the company’s existing lineup. All of the devices are available in ultra-compact, DSOP Advance package options that realize the low ON-resistance and low Q_OSS for increased efficiency in switching-mode power supplies. These are used in base stations, servers, or industrial equipment.

Comprising one 45 V device and one 60 V device, these N-channel MOSFETs are based on Toshiba’s next-generation U-MOS IX-H trench semiconductor process. This process has been designed to deliver 'best-in-class' efficiency across a wide range of load conditions by driving down ON-resistance (R_DS(ON)) and improving switching efficiency by reducing output charge (Q_OSS).

The MOSFETs will help designers to reduce losses and board space in a variety of power management circuits including high-side and low-side switching in DC-DC conversion and secondary side synchronous rectification in AC-DC designs. The technologies are also ideal for motor control and for protection circuit modules in electronic equipment based on lithium ion (Li-ion) batteries.

At a voltage (V_GS) of 10 V, the maximum R_DS(ON) rating for the 45 V MOSFET is just 0.75 mΩ, while typical C_OSS is 1860 pF. The 60 V item offers R_DS(ON) and typical C_OSS ratings: 0.95 mΩ and 1160 pF. This ensures enhanced flexibility for optimizing performance in a given application.

The UMOS IX-H MOSFETs are available in a low-profile surface-mount DSOP Advance package: a dual-sided cooling package measuring 5 mm x 6 mm. All of the MOSFETs will operate with channel temperatures up to 175°C.