By Toshiba Semiconductor and Storage 75
Toshiba has developed the Gen-4 super-junction 600 V, 650 V, and 800 V DTMOS IV MOSFET series. Fabricated using the state-of-the-art single epitaxial process, DTMOS IV provides a 30% reduction in Ron·A, a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOS III. A reduction in Ron·A makes it possible to house lower Ron chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies.
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