NV6115 650 V Single GaNFast™ Power IC (170 mΩ)

By Navitas Semiconductor 117

NV6115 650 V Single GaNFast™ Power IC (170 mΩ)

Navitas’ NV6115 is a 650 V GaNFast power IC optimized for high frequency, soft-switching topologies. Monolithic integration of FET, drive, and logic creates an easy-to-use digital-in, power-out high-performance powertrain building block, enabling designers to create the fastest, smallest, and most efficient integrated powertrain. The highest dv/dt immunity, high-speed integrated drive and industry-standard low-profile, low-inductance 5 mm x 6 mm SMT QFN package allow designers to exploit Navitas GaN technology with simple, quick, dependable solutions for breakthrough power density and efficiency. Navitas’ GaNFast power ICs extend the capabilities of traditional topologies such as flyback, half-bridge, resonant, and others to MHz+ and enable the commercial introduction of breakthrough designs.

  • GaNFast power IC
    • Monolithically integrated gate drive
    • Wide logic input range with hysteresis
    • 5 V/15 V input-compatible
    • Wide VCC range (10 V to 30 V)
    • Programmable turn-on dv/dt
    • 200 V/ns dv/dt immunity
    • 650 V eMode GaN FET
    • Low 170 mΩ resistance
    • Zero reverse recovery charge
    • 2 MHz operation
  • Environmental
    • RoHS, Pb-free, REACH-compliant
  • Small, low-profile SMT QFN
    • 5 mm x 6 mm footprint, 0.85 mm profile
    • Minimized package inductance
  • AC to DC, DC to DC, DC to AC
  • Buck, boost, half bridge, full bridge
  • Active clamp flyback, LLC resonant, Class D
  • Mobile fast-chargers, adapters
  • Notebook adapters
  • LED lighting, solar micro-inverters
  • TV/monitor, wireless power
  • Server, telecom, and networking SMPS