CGHV40030F Gallium-Nitride High-Electron-Mobility

By Wolfspeed 197

CGHV40030F Gallium-Nitride High-Electron-Mobility

Wolfspeed’s CGHV40030 is an unmatched Gallium-Nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain, and wide-bandwidth capabilities. The device can be deployed for L-band, S-band, and C-band amplifier applications. The CGHV40030 operates on a 50 V rail circuit while housed in a two-lead flange or pill package.

  • Up to 6 GHz operation
  • 30 W typical output power
  • 16 dB gain
  • Application circuit for 0.96 GHz to 1.4 GHz
  • 70% efficiency at PSAT
  • 50 V operation


  • Amateur radio
  • Satellite communications
  • Radar